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FDD5690

Fairchild Semiconductor
Part Number FDD5690
Manufacturer Fairchild Semiconductor
Description 60V N-Channel PowerTrench MOSFET
Published Mar 30, 2005
Detailed Description FDD5690 June 1999 PRELIMINARY FDD5690 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has...
Datasheet PDF File FDD5690 PDF File

FDD5690
FDD5690

Overview
FDD5690 June 1999 PRELIMINARY FDD5690 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features • • • • 30 A, 60 V.
RDS(ON) = 0.
027Ω @ VGS = 10 V RDS(ON) = 0.
032 Ω @ VGS = 6 V.
Low gate charge (23nC typical).
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
D D G S TO-252 Absolute Maximum Ratings Symbol V DSS V GSS ID Drain-Source Voltage Gate-Source Voltage Maximum Drain Current Maximum Drain Current PD -Continuous -Pulsed (Note 1) (Note 1a) (Note 1b) (Note 1) (Note 1a) G S T C =25 C unless otherwise noted o Parameter Ratings 60 ± 20 30 9 100 50 3.
2 1.
3 -55 to +150 Units V V A Maximum Power Dissipation @ T C = 25 o C T A = 25 o C T A = 25 o C W T J, T stg Operating and Storage Junction Temperature Range °C Thermal Characteristics R θJC R θJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient (Note 1) (Note 1a) (Note 1b) 2.
5 40 96 ° C/W ° C/W ° C/W Package Marking and Ordering Information Device Marking FDD5690 Device FDD5690 Reel Size 13’’ Tape width 16mm Quantity 2500 1999 Fairchild Semiconductor Corporation FDD5690, Rev.
B FDD5690 Electrical Characteristics Symbol W DSS IAR BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 90 30 mJ A V mV/°C 1 100 -100 µA nA nA Off Characteristics Single Pulse Drain-Source VDD = 30 V, ID = 30 A Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Vol...


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