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FDD5670

ON Semiconductor
Part Number FDD5670
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jan 24, 2023
Detailed Description FDD5670 FDD5670 60V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specific...
Datasheet PDF File FDD5670 PDF File

FDD5670
FDD5670

Overview
FDD5670 FDD5670 60V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
extremely low RDS(ON) in a small package.
Applications • DC/DC converter • Motor drives Features • 52 A, 60 V RDS(ON) = 15 mΩ @ VGS = 10 V RDS(ON) = 18 mΩ @ VGS = 6 V • Low gate charge • Fast switching • High performance trench technology for extremely low RDS(ON) D G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case RθJA Thermal Resistance, Junction-to-Ambient RθJA Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) Package Marking and Ordering Information Device Marking Device Reel Size FDD5670 FDD5670 13’’ D G S Ratings 60 ±20 52 150 83 3.
8 1.
6 -55 to +175 1.
8 40 96 Tape width 16mm Units V V A W °C °C/W °C/W °C/W Quantity 2500 units ©2011 Semiconductor Components Industries, LLC.
October-2017, Rev.
2 Publication Order Number: FDD5670/D FDD5670 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 20 V, ID = 10A IAR Drain-Source Avalanche Current 360 mJ 10 A Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 μA 60 ΔBVDSS Breakdown Voltage Temperature ID = 250 μA, Referenced to 25°C 53 ===ΔTJ Coefficient IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V V...


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