DatasheetsPDF.com

FDD5670

Fairchild Semiconductor
Part Number FDD5670
Manufacturer Fairchild Semiconductor
Description 60V N-Channel MOSFET
Published Mar 30, 2005
Detailed Description FDD5670 March 1999 ADVANCE INFORMATION FDD5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel M...
Datasheet PDF File FDD5670 PDF File

FDD5670
FDD5670

Overview
FDD5670 March 1999 ADVANCE INFORMATION FDD5670 60V N-Channel PowerTrenchTM MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.
Features • 48 A, 60 V.
RDS(ON) = 0.
015 Ω @ VGS = 10 V RDS(ON) = 0.
018 Ω @ VGS = 6 V.
• • • Low gate charge.
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID Gate-Source Voltage Maximum Drain Current Maximum Drain Current PD Drain-Source Voltage TC=25oC unless otherwise noted Parameter Ratings 60 ±20 Units V V A -Continuous -Pulsed (Note 1) (Note 1a) 48 10 100 70 2.
8 1.
3 -55 to +150 Maximum Power Dissipation @ T C = 25oC T A = 25oC T A = 25oC (Note 1) (Note 1a) (Note 1b) W T J, T stg Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient (Note 1) (Note 1b) 1.
8 96 °C/W °C/W Package Marking and Ordering Information Device Marking FDD5670 ©1999 Fairchild Semiconductor Corporation Device FDD5670 Reel Size 13’’ Tape width 16mm Quantity 2500 FDD5670 Rev.
A FDD5670 Electrical Characteristics Symbol Parameter TC=25oC unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 µ A VDS = 48 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 60 1 100 -100 V µA nA nA ON CHARACTERISTICS VGS(TH) RDS(ON) Stat...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)