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FDD5680

ON Semiconductor
Part Number FDD5680
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jan 23, 2023
Detailed Description FDD5680 March 2015 FDD5680 N-Channel, PowerTrench MOSFET General Description This N-Channel MOSFET is produced using ...
Datasheet PDF File FDD5680 PDF File

FDD5680
FDD5680

Overview
FDD5680 March 2015 FDD5680 N-Channel, PowerTrench MOSFET General Description This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Applications • DC/DC converter • Motor drives Features • 38 A, 60 V.
RDS(on) = 0.
021 Ω @ VGS = 10 V RDS(on) = 0.
025 Ω @ VGS = 6 V.
• Low gate charge (33nC typical).
• Fast switching speed.
• High performance trench technology for extremely low RDS(on).
D D G G S TO-252 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Maximun Drain Current - Continuous (Note 1) (Note 1a) Maximum Drain Current - Pulsed Maximum Power Dissipation @ TC = 25oC (Note 1) TA = 25oC (Note 1a) TA = 25oC (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJA Thermal Resistance, Junction-to- Case Thermal Resistance, Junction-to- Ambient (Note 1) (Note 1b) S Ratings 60 ±20 38 8.
5 100 60 2.
8 1.
3 -55 to +150 2.
1 96 Units V V A W °C °C/W °C/W Package Marking and Ordering Information Device Marking Device Reel Size FDD5680 FDD5680 13’’ 2000 Semiconductor Components Industries, LLC.
October-2017, Rev.
3 Tape width 16mm Quantity 2500 Publication Order Number: FDD5680/D FDD5680 Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics WDSS Single Pulse Drain-Source Avalanche Energy VDD = 30 V, ID = 38 A IAR Maximum Drain-Source Avalanche Current BVDSS ∆BVDSS ∆TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 µA 60 ID = 250µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V IGSSF Gate-Body Leakage Current, Forward VGS = 20V, VDS = 0 V IGSSR Gate-Body Leakage Current, Reverse ...


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