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BSP126

NXP
Part Number BSP126
Manufacturer NXP
Description N-channel enhancement mode vertical D-MOS transistor
Published Mar 23, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor Product specification Fi...
Datasheet PDF File BSP126 PDF File

BSP126
BSP126

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.
FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching.
• No secondary breakdown.
PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP126 QUICK REFERENCE DATA Drain-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source on-resistance ID = 300 mA; VGS = 10 V Gate-source threshold voltage RDS(on) VGS(th) VDS ID Ptot BSP126 max.
max.
max.
typ.
max.
max.
250 V 350 mA 1.
5 W 5.
0 Ω 7.
0 Ω 2 V PIN CONFIGURATION handbook, halfpage...


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