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BSP129

Siemens Semiconductor Group
Part Number BSP129
Manufacturer Siemens Semiconductor Group
Description SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
Published Mar 23, 2005
Detailed Description SIPMOS® Small-Signal Transistor BSP 129 q q q q q q q VDS 240 V ID 0.2 A RDS(on) 20 Ω N channel Depletion mode High d...
Datasheet PDF File BSP129 PDF File

BSP129
BSP129

Overview
SIPMOS® Small-Signal Transistor BSP 129 q q q q q q q VDS 240 V ID 0.
2 A RDS(on) 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 1 G 2 D 3 S 4 D BSP 129 SOT-223 BSP 129 Q67000-S073 E6327: 1000 pcs/reel BSP 129 Q67000-S314 E7941: 1000 pcs/reel VGS(th) selected in groups: (see page 212) Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 34 ˚C Pulsed drain current, Max.
power dissipation, Symbol Values 240 240 ± 14 ± 20 0.
2 0.
6 1.
7 – 55 … + 150 72 12 E 55/150/56 Unit V VDS VDGR VGS Vgs ID ID puls Ptot Tj, Tstg RthJA RthJS – – A W ˚C K/W – TA = 25 ˚C TA = 25 ˚C Operating and storage temperature range Thermal resistance 1) chip-ambient chip-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pc...


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