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BSP52

Infineon Technologies AG
Part Number BSP52
Manufacturer Infineon Technologies AG
Description NPN Silicon Darlington Transistors
Published Mar 23, 2005
Detailed Description NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage • Complementary t...
Datasheet PDF File BSP52 PDF File

BSP52
BSP52

Overview
NPN Silicon Darlington Transistors • High collector current • Low collector-emitter saturation voltage • Complementary types: BSP60 - BSP62 (PNP) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BSP50-BSP52 43 2 1 Type BSP50 BSP51 BSP52 Marking BSP50 1=B BSP51 1=B BSP52 1=B Pin Configuration 2=C 3=E 4=C 2=C 3=E 4=C 2=C 3=E 4=C - - Package SOT223 SOT223 SOT223 Maximum Ratings Parameter Collector-emitter voltage BSP50 BSP51 BSP52 Collector-base voltage BSP50 BSP51 BSP52 Emitter-base voltage Collector current Peak collector current, tp ≤ 10 ms Base current Total power dissipationTS ≤ 124 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB Ptot Tj Tstg Value 45 60 80 60 80 90 5 1 2 100 1.
5 150 -65 .
.
.
150 Unit V A mA W °C 1 2011-10-05 BSP50-BSP52 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 17 Unit K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min.
typ.
max.
DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 , BSP50 IC = 10 mA, IB = 0 , BSP51 IC = 10 mA, IB = 0 , BSP52 V(BR)CEO 45 60 80 - - Collector-base breakdown voltage IC = 100 µA, IE = 0 , BSP50 IC = 100 µA, IE = 0 , BSP51 IC = 100 µA, IE = 0 , BSP52 V(BR)CBO 60 80 90 - - Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-emitter cutoff current VCE = VCE0max, VBE = 0 Emitter-base cutoff current VEB = 4 V, IC = 0 DC current gain2) IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V Collector-emitter saturation voltage2) IC = 500 mA, IB = 0.
5 mA IC = 1 A, IB = 1 mA Base emitter saturation voltage2) IC = 500 mA, IB = 0.
5 mA IC = 1 mA, IB = 1 A V(BR)EBO 5 ICES - IEBO - hFE VCEsat VBEsat 1000 2000 - - - - - - - 10 10 - 1.
3 1.
8 1.
9 2.
2 Unit V µA µA V 1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300µs; D < 2% 2 2011-10-05 BSP50-BSP52 Electrical Characteris...


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