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FDC638P

ON Semiconductor
Part Number FDC638P
Manufacturer ON Semiconductor
Description P-Channel MOSFET
Published Dec 12, 2021
Detailed Description MOSFET – P-Channel, 2.5 V Specified, POWERTRENCH) -20 V, -4.5 A, 48 mW FDC638P General Description This P−Channel 2.5 V...
Datasheet PDF File FDC638P PDF File

FDC638P
FDC638P

Overview
MOSFET – P-Channel, 2.
5 V Specified, POWERTRENCH) -20 V, -4.
5 A, 48 mW FDC638P General Description This P−Channel 2.
5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features • −4.
5 A, −20 V ♦ RDS(on) = 48 mW @ VGS = −4.
5 V ♦ RDS(on) = 65 mW @ VGS = −2.
5 V • Low Gate Charge (10 nC Typical) • High Performance Trench Technology for Extremely Low RDS(on) • SUPERSOTt−6 Package: Small Fo...


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