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BSP50

nexperia
Part Number BSP50
Manufacturer nexperia
Description NPN Darlington transistor
Published May 25, 2022
Detailed Description BSP50 NPN Darlington transistor 6 June 2018 Product data sheet 1. General description NPN Darlington transistor in an ...
Datasheet PDF File BSP50 PDF File

BSP50
BSP50


Overview
BSP50 NPN Darlington transistor 6 June 2018 Product data sheet 1.
General description NPN Darlington transistor in an SOT223 plastic package.
PNP complement: BSP60 2.
Features and benefits • High current of 1 A • Low voltage of 45 V • Integrated diode and resistor • AEC-Q101 qualified 3.
Applications • Industrial high gain amplification 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VCBO VCES collector-base voltage collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain Conditions open emitter base short-circuited to emitter VCE = 10 V; IC = 150 mA [1] Pulse test: tp ≤ 300 μs; δ ≤ 0.
02.
Min Typ Max Unit - - 60 V - - 45 V - - 1 A - - 2 A [1] 1000 - - Nexperia BSP50 NPN Darlington transistor 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline 4 123 SC-73 (SOT223) Graphic symbol C B E aaa-027580 6.
Ordering information Table 3.
Ordering information Type number Package Name BSP50 SC-73 Description plastic, surface-mounted package with increased heatsink; 4 leads; 4.
6 mm pitch; 6.
5 mm x 3.
5 mm x 1.
65 mm body Version SOT223 BSP50 Product data sheet All information provided in this document is subject to legal disclaimers.
6 June 2018 © Nexperia B.
V.
2018.
All rights reserved 2 / 10 Nexperia BSP50 NPN Darlington transistor 7.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VCBO collector-base voltage open emitter VCES collector-emitter voltage base short-circuited to emitter VEBO emitter-base voltage open collector IC collector current ICM peak collector current IBlim limiting base current Ptot total power dissipation Tamb ≤ 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Min Max - 60 - 45 - 5 - 1 -...


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